Tuesday, October 31, 2006

Photolithography process

Before spin resist it is necessary:
· Clean GaAs wafer piece in NPM hot, ID water, 2-Propanol, ID water.
· Dehydration bake @ 110° C for 5 minutes

Positive Photoresist





Negative reversal process for resist AZ 5214E


Spin-coat resist 5000rpm for 60s
Soft bake at 110° C for 60s
Expose at 10mW/cm2 with UV light for 1.8s (maskaligner MA6 or MJB3)
Bake at 110° C for 60s
Flood expose without mask for 4s
Develop in MF319 developer for 25s and rinse with ID water

Negative Photoresist






































































































































Photoresist





Spin Speed/Time





Soft bake Temp/Time





Exposure Time (assuming 10mW/cm2)





Develop Time




(Developer MF 319)





Post-Exposure Bake
Temp/Time





Thickness





AZ 5214E





5000rpm/60s





110° C/60s





3s





20s





115° C/60s





1.3um





AZ 1818





5000rpm/60s





110° C/60s





4s





22s





115° C/60s





1.6um





AZ 4533





5000rpm/60s





110° C/60s





10s





35-40s





115° C/60s





3.5um





AZ 4562





5000rpm/60s





110° C/60s





15-20s





50-60s





115° C/60s





5um